CEH2316A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,6.3A,RDS(ON)=32mW@VGS=10V. RDS(ON)=44mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CES2316

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,4.8A,RDS(ON)=34mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CHM2316PT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT4.8Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHM2316QPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT6Ampere FEATURE *Smallflatpackage.(SC-74/SOT-457) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications

CM2316

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CMS-2316A

SLIDESWITCHES(SMD)

CMS-2316B

SLIDESWITCHES(SMD)

CMS-2316C

SLIDESWITCHES(SMD)

CMS-2316TA

SLIDESWITCHES(SMD)

CMS-2316TB

SLIDESWITCHES(SMD)