Rectifier Diode

FEATURES * Halogen-free type * Lead free product, compliance to RoHS * GPRC (Glass passivated rectifier chip) inside * Glass passivated cavity-free junction * Lead less chip form, no lead damage * Low power loss, high efficiency * High current capability * Plastic package has Underwriters

文件：303.13 Kbytes 页数：2 Pages

ZOWIE

智威

Rectifier Diode

FEATURES * Halogen-free type * Lead free product, compliance to RoHS * GPRC (Glass passivated rectifier chip) inside * Glass passivated cavity-free junction * Lead less chip form, no lead damage * Low power loss, high efficiency * High current capability * Plastic package has Underwriters

文件：303.13 Kbytes 页数：2 Pages

ZOWIE

智威

Rectifier Diode

FEATURES * Halogen-free type * Lead free product, compliance to RoHS * GPRC (Glass passivated rectifier chip) inside * Glass passivated cavity-free junction * Lead less chip form, no lead damage * Low power loss, high efficiency * High current capability * Plastic package has Underwriters

文件：303.13 Kbytes 页数：2 Pages

ZOWIE

智威

Rectifier Diode

FEATURES * Halogen-free type * Lead free product, compliance to RoHS * GPRC (Glass passivated rectifier chip) inside * Glass passivated cavity-free junction * Lead less chip form, no lead damage * Low power loss, high efficiency * High current capability * Plastic package has Underwriters

文件：303.13 Kbytes 页数：2 Pages

ZOWIE

智威

Rectifier Diode

FEATURES * Halogen-free type * Lead free product, compliance to RoHS * GPRC (Glass passivated rectifier chip) inside * Glass passivated cavity-free junction * Lead less chip form, no lead damage * Low power loss, high efficiency * High current capability * Plastic package has Underwriters

文件：303.13 Kbytes 页数：2 Pages

ZOWIE

智威

10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier

Description The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastru

文件：712.89 Kbytes 页数：7 Pages

WOLFSPEED

10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier

Description The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastru

文件：712.89 Kbytes 页数：7 Pages

WOLFSPEED

10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier

Description The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastru

文件：712.89 Kbytes 页数：7 Pages

WOLFSPEED

10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier

Description The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastru

文件：712.89 Kbytes 页数：7 Pages

WOLFSPEED

GaN on SiC Power Amplifier Module for 5G

Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been designed to operate from 3300 MHz t

文件：422.7 Kbytes 页数：7 Pages

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