WSF41632-22XX中文资料WEDC数据手册PDF规格书

FEATURES

■ Access times of 25ns (SRAM) and 120ns (FLASH)

■ Packaging

• 66 pin, PGA Type, 1.385 square HIP, hermetic ceramic HIP (Package 402)

• 68 lead, hermetic CQFP (G2T), 22.4mm (0.880) square (Package 509) 4.57mm (0.180) height Designed to fi t JEDEC 68 lead 0.990 CQFJ footprint (FIGURE 2). Package to be developed.

■ 128Kx32 SRAM

■ 512Kx32 5V Flash

■ Organized as 128Kx32 of SRAM and 512Kx32 of Flash Memory with common data bus

■ Low power CMOS

■ Commercial, industrial and military temperature ranges

■ TTL compatible inputs and outputs

■ Built-in decoupling caps and multiple ground pins for low noise operation

■ Weight - 13 grams typical

FLASH MEMORY FEATURES

■ 100,000 erase/program cycles minimum

■ Sector architecture

• 8 equal size sectors of 64KBytes each

• Any combination of sectors can be concurrently erased. Also supports full chip erase

■ 5V programming; 5V ± 10 supply

■ Embedded erase and program algorithms

■ Hardware write protection

■ Page program operation and internal program control time.