HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM). This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low power die that affords exceptional speed capabilities with a 3.3 volt VC

文件：47.57 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM). This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low power die that affords exceptional speed capabilities with a 3.3 volt VC

文件：47.57 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM). This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low power die that affords exceptional speed capabilities with a 3.3 volt VC

文件：47.57 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM). This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low power die that affords exceptional speed capabilities with a 3.3 volt VC

文件：47.57 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM). This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low power die that affords exceptional speed capabilities with a 3.3 volt VC

文件：47.57 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM

ST

意法半导体