MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its Bipolar counterp

文件：19.41 Kbytes 页数：2 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 16K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its Bipolar counterp

文件：53.9 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 16K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its Bipolar counterp

文件：53.9 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its Bipolar counterp

文件：19.41 Kbytes 页数：2 Pages

STMICROELECTRONICS

意法半导体

MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its Bipolar counterp

文件：19.41 Kbytes 页数：2 Pages

STMICROELECTRONICS

意法半导体