丝印：WNSC10650T；Package：DFN8*8；Silicon Carbide Diode

文件：504.15 Kbytes 页数：11 Pages

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瑞能半导体

Silicon Carbide Diode

文件：504.15 Kbytes 页数：11 Pages

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瑞能半导体

SiC Diodes

Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies. • Highly stable switching performance\n• High forward surge capability IFSM\n• Extremely fast reverse recovery time\n• Superior in efficiency to Silicon Diode alternatives\n• Reduced losses in associated MOSFET\n• Reduced EMI\n• Reduced cooling requirements\n• RoHS compliant;

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瑞能半导体

Package：4-VSFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SILICON CARBIDE POWER DIODE

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瑞能半导体