首页 >WMZT3P6T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Triacssensitivegate | TGS Tiger Electronic Co.,Ltd | TGS | ||
Employsflame-retardantepoxyresinUL94V-0 | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Triacssensitivegate | TGS Tiger Electronic Co.,Ltd | TGS | ||
THYRISTORS SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
THYRISTORS3AMOLDSCR The3P4MHand3P6MHareP-gatefullydiffusedmold SCRswithanaverageon-currentof3A.Therepeatpeakoffvoltages (andreversevoltages)are400Vand600V. FEATURES •Thistransistorfeaturesasmallandlightweightpackageand iseasytohandleevenonthemountingsurfaceduetoits | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighCurrentDensitySurface-MountSchottkyRectifier FEATURES •Verylowprofile-typicalheightof1.0mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiency •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable •Materialcategoriza | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighCurrentDensitySurfaceMountSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighCurrentDensitySurfaceMountSchottkyRectifiers | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-CurrentDensitySurfaceMountSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SchottkyBarrierRectifiers | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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