LV N MOSFETs

• Advance High Cell Density Trench Technology\n• Low Capacitance to Minimize Switching Losses\n• RoHS Compliant, Halogen Free and Lead Free\n;

WeEn

瑞能半导体

Precision Fixed Attenuator

Wideband Operation, DC to 8000 MHz High Power Handling, 250W Excellent VSWR, 1.11 Typ. Excellent Flatness, ±0.4 dB Typ. Uni-directional power rating. APPLICATIONS Test and Measurement Equipment LTE & 5G MIMO Infrastructure Satellite Communications Radar, EW, and ECM Defense Systems

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MINI

N-Channel Enhancement Mode Power MOSFET

General Features VDS =250V,ID =29A RDS(ON)

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RECTRON

丽正国际