Power MOSFET-Super Junction MOSFET 650V

采用先进的超结技术和优化的设计结构，相比传统的高压VDMOS，新一代Wayon WMOSTM C2 系列产品具有极低的特征导通电阻。C2系列的FOM (RDS(on)*Qg)较C1系列降低38%，有助于提升开关电源的效率及功率密度。相比传统VDMOS，500V-900V WMOSTM C2系列产品具有更好的性价比。

Wayon

维安

Power MOSFET

文件：1.9873 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired

文件：410.8 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

文件：634.28 Kbytes 页数：4 Pages

CET-MOS

华瑞