首页 >WMF-3910HPRT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HighVoltage/ThickFilmResistors | Riedon Riedon Powertron | Riedon | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤115mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
20AND30AMPFASTRECOVERYRECTIFIERDIODES Description ThisrangeoffastrecoverydiodesisdesignedforapplicationsinDCpowersupplies,inverters,choppers,ultrasonicsystemandforuseasafree-wheelingdiode. Features ■Shortreverserecoverytime ■Lowstoredcharge ■Widecurrentrange ■Excellentsurgecapabilities ■Stu | IRF International Rectifier | IRF | ||
RectifiersFastRecovery | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A) | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤115mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
MOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesolderingtechniques. Powerdissipationlevelsupto1.5watts arepossibleintypicalsurfacemountapplications. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF |
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