BURNDY WEJTAP SELECTION CHART

文件：46.58 Kbytes 页数：1 Pages

FCI-CONNECTOR

丝印：WCR1K2N65TYW；Package：TO-220；650V N-Channel Super Junction MOSFET

文件：1.47894 Mbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：WCR1K2N65TYW；Package：TO-220；650V N-Channel Super Junction MOSFET

文件：1.47894 Mbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：WCR1K2N65TFYW；Package：TO-220F；650V N-Channel Super Junction MOSFET

文件：1.47894 Mbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：WCR1K2N65TFYW；Package：TO-220F；650V N-Channel Super Junction MOSFET

文件：1.47894 Mbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：WCR1K2N65TGYW；Package：TO-252E-2L；650V N-Channel Super Junction MOSFET

文件：1.47894 Mbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：WCR1K2N65TGYW；Package：TO-252E-2L；650V N-Channel Super Junction MOSFET

文件：1.47894 Mbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

General Purpose Thick Film Chip Resistor

WCR Series • Tolerances to ±0.5 • TCR down to ±100ppm/°C • Zero ohm jumpers available • Wide ohmic range from 1W to 10MW • Now supplied with RoHS compliant terminations

文件：227.2 Kbytes 页数：3 Pages

IRCTT

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

恩XP

Water Cooled High Power Resistors

文件：1.17214 Mbytes 页数：2 Pages

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