WCDSC006中文资料Half-bridge level-shift gate-driver IC ensuring robust and efficient wireless charging operation数据手册Infineon规格书

描述 Description

The half-bridge gate driver EiceDRIVER™ WCDSC006 is particularly suitable to drive both high-side and low-side MOSFETs in a half-bridge inverter configuration especially in inductive wireless power charging technology for smartphones.

The inputs of the gate driver are TTL (transistor-transistor logic) compatible and can withstand input voltages up to 7V regardless of the VDD voltage. Even though the high-side and low-side power devices are driven independently, the EiceDRIVER™ WCDSC006 gate driver enforces a 5ns (typ) dead-time to prevent shoot-through. It has a current capability of 4.0A sink and 2.0A source and offers a maximum bootstrap voltage of 60V for high input voltage operation.

The EiceDRIVER™ WCDSC006 gate driver goes together perfectly with Infineon’s OptiMOS™ 5 power MOSFET family and ensures a safe wireless power transfer by achieving high robustness and efficiency.

特性 Features

• -0.3V to 7V input bin capability
• 4A sink and 2A source current capability for high-side and lo-side drivers
• Independent high-side / low-side TTL logic inputs
• Integrated bootstrap diode
• Maximum bootstrap voltage of 60V
• 5ns (typ) dead-time to prevent shoot-through

Benefits
• Increased robustness
• Faster switching mode and higher efficiency results
• Increase flexibility
• No need of external components
• Higher margin and more robust operation
• No risk of cross conduction

简介

WCDSC006属于集成电路（IC）的全半桥驱动器。由制造生产的WCDSC006全半桥驱动器器件属于电桥驱动器电源管理集成电路 (PMIC) 系列，包含两个或多个功率晶体管，以及在外部器件控制下将其用作开关所需的电路。这些晶体管通常在内部配置为成对串联连接（称为半桥），因而任意指定晶体管对之间的结点都可以连接至两个电源轨中的任一个。这类器件常用于将控制器件（如微控制器）提供的低电平信号转换为操作执行器（如步进电机或无刷电机）所需的较大功率信号。