13003AD

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Intergratedantiparallelcollector-emitterdiode ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 andSwitch-modepowersupplies

13003ADA

NPNSILICONBIPOLARTRANSISTORSFORLOWFREQUENCYAMPLIFICATION

NPNSILICONBIPOLARTRANSISTORSFORLOWFREQUENCYAMPLIFICATION DESCRIPTION TheUTC13003ADAisasiliconNPNpowerswitchingtransistor;itusesUTC’sadvancedtechnologytoprovidecustomershighcollector-basebreakdownvoltage,lowreverseleakagecurrentandhighreliability,etc. TheUTC

13003ADG

NPNSILICONPOWERTRANSISTOR

DESCRIPTION Thesedevicesaredesignedforhigh-voltage,high-speedpowerswitchinginductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedfor115and220Vapplicationsinswitchmode. FEATURES *ReversebiasedSOAwithinductiveload@TC=100°C *Inductiveswitchingmatr

13003B

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Intergratedantiparallelcollector-emitterdiode ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 andSwitch-modepowersupplies

13003B

Nytyes®withStainlessSteelLockingDevice

13003B

Nytyes®withStainlessSteelLockingDevice

13003B

Highvoltagefast-switchingNPNpowertransistor

Features •Highvoltagecapability •Lowspreadofdynamicparameters •Veryhighswitchingspeed Applications •Electronicballastforfluorescentlighting(CFL) •SMPSforbatterycharger Description Thedeviceismanufacturedusinghighvoltage multi-epitaxialplanartechnologyforhig

13003BDG

NPNSILICONBIPOLARTRANSISTORSFORLOWFREQUENCYAMPLIFICATION

13003BR

NPNSILICONTRANSISTOR

FEATURES Powerdissipation PCM:1.25WTamb=25 Collectorcurrent ICM:1.5A Collector-basevoltage V(BR)CBO:700V

13003BR

TRIPLEDIFFUSEDNPNTRANSISTOR(SWITCHINGREGULATOR,HIGHVOLTAGEANDHIGHSPEEDSWITCHING)

SWITCHINGREGULATORAPPLICATION. HIGHVOLTAGEANDHIGHSPEED SWITCHINGAPPLICATION. FEATURES •ExcellentSwitchingTimes :ton=1.1μS(Max.),tf=0.7μS(Max.),atIC=1A •HighCollectorVoltage:VCBO=700V.