1200 V, 175 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • High Humidity Operation THB-80 (HV-H3TRB) • Ultra Low Loss, High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminu

文件：3.38575 Mbytes 页数：12 Pages

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1200 V, 175 A, Silicon Carbide, Half-Bridge Module

Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form FactorStrong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment ApplicationsLow-Inductance Design (10 – 15 nH) for Fast Switching with Low Power LossesMOSFET Die and • Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form Factor\n• Strong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment Applications\n• Low-Inductance Design (10 – 15 nH) for Fast Switching with Low Power Losses\n• ;

Wolfspeed(CREE)

1200 V, 175 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • Ultra Low Loss, High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator Applications • Inductio

文件：3.3835 Mbytes 页数：12 Pages

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1200 V, 175 A, Silicon Carbide, Half-Bridge Module

Typical Applications • Railway Auxiliary & Traction • Induction Heating • Motor Drives • Renewables • EV Fast Charging • UPS and SMPS Technical Features • Industry Standard 62 mm Footprint • Housing CTI ≥ 600 (Material Group I) • Compliant with EN45545-2 R22/23 HL3 • High Humidity Ope

文件：3.40891 Mbytes 页数：12 Pages

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