WAS175M12BM3

1200 V, 175 A, Silicon Carbide, Half-Bridge Module

TechnicalFeatures •IndustryStandard62mmFootprint •HighHumidityOperationTHB-80(HV-H3TRB) •UltraLowLoss,High-FrequencyOperation •ZeroReverseRecoveryfromDiodes •ZeroTurn-offTailCurrentfromMOSFET •Normally-off,Fail-safeDeviceOperation •CopperBaseplateandAluminu

WAS175M12BM3

1200 V, 175 A, Silicon Carbide, Half-Bridge Module

Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form FactorStrong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment ApplicationsLow-Inductance Design (10 – 15 nH) for Fast Switching with Low Power LossesMOSFET Die and; • Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form Factor\n• Strong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment Applications\n• Low-Inductance Design (10 – 15 nH) for Fast Switching with Low Power Losses\n• ;

CAS175M12BM3

1200V,175A,SiliconCarbide,Half-BridgeModule

TechnicalFeatures •IndustryStandard62mmFootprint •UltraLowLoss,High-FrequencyOperation •ZeroReverseRecoveryfromDiodes •ZeroTurn-offTailCurrentfromMOSFET •Normally-off,Fail-safeDeviceOperation •CopperBaseplateandAluminumNitrideInsulator Applications •Inductio

HAS175M12BM3

1200V,175A,SiliconCarbide,Half-BridgeModule

TypicalApplications •RailwayAuxiliary&Traction •InductionHeating •MotorDrives •Renewables •EVFastCharging •UPSandSMPS TechnicalFeatures •IndustryStandard62mmFootprint •HousingCTI≥600(MaterialGroupI) •CompliantwithEN45545-2R22/23HL3 •HighHumidityOpe

WB

Viking光颉
0201/0402/0603

Viking光颉