N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL Ros(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CU

文件：154.22 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：88.35 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

包装：散装 类别：工具 刀，切割工具 描述：SNIP,IND,STRAIGHT,INLAID,14.5\

ATG

丝印：W7N04；Package：SOT-223；40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@5A

文件：443.63 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：W7N04；Package：SOT-223；40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@5A

文件：371.69 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：W7N06A；Package：SOT-223；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@6A

文件：360.1 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：W7N06A；Package：SOT-223；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@6A

文件：347.96 Kbytes 页数：6 Pages

PANJIT

強茂

N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET

ST

意法半导体