32M X 8 BANKS X 8 BIT DDR3L SDRAM

文件：3.41979 Mbytes 页数：160 Pages

WINBOND

华邦电子

32M X 8 BANKS X 8 BIT DDR3L SDRAM

文件：3.41979 Mbytes 页数：160 Pages

WINBOND

华邦电子

32M X 8 BANKS X 8 BIT DDR3L SDRAM

文件：3.41979 Mbytes 页数：160 Pages

WINBOND

华邦电子

32M X 8 BANKS X 8 BIT DDR3L SDRAM

文件：3.41979 Mbytes 页数：160 Pages

WINBOND

华邦电子

32M X 8 BANKS X 8 BIT DDR3L SDRAM

文件：3.41979 Mbytes 页数：160 Pages

WINBOND

华邦电子

双倍数据传输速率同步动态随机存取内存-3rd generation(第三代)

The W632GG6KB is a 2G bits DDR3 SDRAM and speed involving -11, -12, 12I, -15 and 15I •Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V \n• Double Data Rate architecture: two data transfers per clock cycle \n• Eight internal banks for concurrent operation \n• 8 bit prefetch architecture \n• CAS Latency: 6, 7, 8, 9, 10, 11 and 13 \n• Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed v;

Winbond

华邦电子

双倍数据传输速率同步动态随机存取内存-3rd generation(第三代)

The W632GG6MB is a 2G bits DDR3 SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J. •Power Supply: VDD, VDDQ = 1.5V±0.075V\n• Eight internal banks for concurrent operation\n• CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\n• Programmable read burst ordering: interleaved or nibble sequential\n• Edge-aligned with read data and center-aligned with write data\n• Differential clock input;

Winbond

华邦电子

IC DRAM 2G PARALLEL 1066MHZ

Winbond

华邦电子

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：IC DRAM 2GBIT PARALLEL 667MHZ

Winbond Electronics

Package：96-TFBGA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：IC DRAM 2GBIT PARALLEL 96WBGA

Winbond Electronics