512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1. GENERAL DESCRIPTION The W39V040FB is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniformsectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A

文件：365.82 Kbytes 页数：33 Pages

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512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1. GENERAL DESCRIPTION The W39V040FB is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniformsectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A

文件：365.82 Kbytes 页数：33 Pages

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华邦电子

512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1. GENERAL DESCRIPTION The W39V040FB is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniformsectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A

文件：365.82 Kbytes 页数：33 Pages

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华邦电子

512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1. GENERAL DESCRIPTION The W39V040FB is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniformsectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A

文件：365.82 Kbytes 页数：33 Pages

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512K 횞 8 CMOS FLASH MEMORY WITH FWH INTERFACE

GENERAL DESCRIPTION The W39V040FC is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbits of data are divided into 16 x 8 Kbytes pages and 6 x 64 Kbytes sectors or 8 x 64 Kbytes sectors.

文件：363.02 Kbytes 页数：36 Pages

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