丝印：W3R3；WE-DD SMT Shielded Coupled Inductor

General Properties: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：661.9 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：W3W；Package：SOT-323；SURFACE MOUNT DUAL, SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZDA2V4 Series silicon dual zener diode is a highly quality voltage regulator, connected in a common anode configuration, for use in industrial, commercial, entertainment and computer applications.

文件：124.9 Kbytes 页数：2 Pages

Central

丝印：W34；Package：SOT-353；Transient Voltage Suppressors for ESD Protection

Feature 41~56 Watts Peak Pulse Power per Line (tp=8/20μs) Protects Four unidirectional I/O Lines Low Clamping Voltage Working Voltages : 3.3, 5.0, 10V Low Leakage Current IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (Lightning) 1.6~3.4A (8/20μ

文件：974.42 Kbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：W33；Package：SOT-23；NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：180.93 Kbytes 页数：14 Pages

恩XP

丝印：W33；Package：SOT-23；NPN resistor-equipped transistor

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：46.15 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：W33；Package：SOT-23；NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：92.31 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：W3N10A；Package：SOT-223；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@2.2A

文件：412.05 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：W3P06A；Package：SOT-223；60V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-2A

文件：860.56 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：W3P06A；Package：SOT-223；60V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-2A

文件：876.1 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：W3P10A；Package：SOT-223；100V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V,ID@-2.6A

文件：413.22 Kbytes 页数：8 Pages

PANJIT

強茂