W2SA1943T

功率三极管;

2SA1943

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5200/FJL4315. •FullthermalandelectricalSpicemodel

2SA1943

iscSiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-300V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=-3.0V(Max)@IC=-8A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

2SA1943

TRANSISTOR(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Highcollectorvoltage:VCEO=−230V(min) •Complementaryto2SC5200 •Recommendedfor100-Whigh-fidelityaudiofrequencyamplifieroutputstage.

2SA1943

TOSHIBATRANSISTORSILICONPNPTRIPLEDIFFUSEDTYPE

DESCRIPTION •HighCurrentCapability •HighPowerDissipation •HighCollector-EmitterBreakdownVoltage-:V(BR)CEo=-230V(Min) •ComplementtoType2SC5200 APPLICATIONS •Poweramplifierapplications •Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstageapplications

2SA1943

POWERAMPLIFIERAPPLICATIONS

2SA1943

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SC5200 APPLICATIONS •Poweramplifierapplications •Recommendedfor100Whighfidelityaudiofrequencyamplifieroutputstage

2SA1943

PowerAmplifierApplications

2SA1943

iscSiliconPNPPowerTransistor

DESCRIPTION •HighCurrentCapability •HighPowerDissipation •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=-230V(Min) •ComplementtoType2SC5200 APPLICATIONS •Poweramplifierapplications •Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstageapplications

2SA1943

PowerAmplifierApplications