W29GL064C中文资料并行式 NOR 型闪存数据手册Winbond规格书

描述 Description

64M-bit 3 Volt Parallel Flash Memory with Page Mode

特性 Features

•32k-Word/64k-Byte uniform sector architecture
• Top(T)/Bottom(B) Boot Sector
• 16-Word/32-Byte write buffer
• Secured Silicon Sector area
• Polling/Toggling methods are used to detect the status of program and erase operation
• More than 100,000 erase/program cycles
• Low power consumption
• Wide temperature range
• Faster Erase and Program time
• Single 3V Read/Program/Erase (2.7 - 3.6V)
• #WP/ACC Input
• Ready/#Busy output (RY/#BY) detects completion of program or erase cycle
• Package:TSOP 56^3, LFBGA 64^3, TSOP 48, TFBGA 48