W29GL064C数据手册集成电路（IC）的存储器规格书PDF

描述 Description

64M-bit 3 Volt Parallel Flash Memory with Page Mode

特性 Features

•32k-Word/64k-Byte uniform sector architecture
• High(H)/Low(L) Sector Protected
• Top(T)/Bottom(B) Boot Sector
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• 16-Word/32-Byte write buffer
• 8-Word/16-Byte page read buffer
• Secured Silicon Sector area
• Enhanced Sector Protect using Dynamic and Individual mechanisms
• Polling/Toggling methods are used to detect the status of program and erase operation
• Suspend and resume commands used for program and erase operations
• More than 100,000 erase/program cycles
• More than 20-year data retention
• Low power consumption
• Deep power down mode
• Wide temperature range
• Compatible manufacturer ID for drop-in replacement
• Faster Erase and Program time
• CFI (Common Flash Interface) support
• Single 3V Read/Program/Erase (2.7 - 3.6V)
• Enhanced Variable IO control
• #WP/ACC Input
• Hardware reset input (#reset) resets device
• Ready/#Busy output (RY/#BY) detects completion of program or erase cycle
• Package:TSOP 56^3, LFBGA 64^3, TSOP 48, TFBGA 48