W27E520中文资料华邦电子数据手册PDF规格书

GENERAL DESCRIPTION

The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 x 8 bits. It includes latches for the lower 8 address lines to multiplex with the 8 data lines. To cooperate with the MCU, this device could save the external TTL component, also cost and space. It requires only one supply in the range of 4.5V to 5.5V in normal read mode. The W27E520 provides an electrical chip erase function. It will be a great convenient when you need to change/update the contents in the device.

FEATURES

• High speed access time: 70/90 nS (max.)

• Read operating current: 20 mA (max.)

• Erase/Programming operating current 30 mA (max.)

• Standby current: 100 μA (max.)

• Unregulated battery power supply range, 4.5V to 5.5V

• +13V erase and programming voltage

• High Reliability CMOS Technology

- 2K V ESD Protection

- 200 mA Latchup Immunity

• Fully static operation

• All inputs and outputs directly TTL/CMOS compatible

• Three-state outputs

• Available packages: 20-pin TSSOP and 20-pin SOP