512K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 x 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: 90/120 nS (ma

文件：174.28 Kbytes 页数：15 Pages

WINBOND

华邦电子

512K x 8 ELECTRICALLY ERASABLE EPROM

Winbond

华邦电子

512K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 x 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: 90/120 nS (ma

文件：174.28 Kbytes 页数：15 Pages

WINBOND

华邦电子

512K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 x 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: 90/120 nS (ma

文件：174.28 Kbytes 页数：15 Pages

WINBOND

华邦电子

512K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 x 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: 90/120 nS (ma

文件：174.28 Kbytes 页数：15 Pages

WINBOND

华邦电子

512K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 x 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: 90/120 nS (ma

文件：174.28 Kbytes 页数：15 Pages

WINBOND

华邦电子

512K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 x 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: 90/120 nS (ma

文件：174.28 Kbytes 页数：15 Pages

WINBOND

华邦电子

512K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 x 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: 90/120 nS (ma

文件：174.28 Kbytes 页数：15 Pages

WINBOND

华邦电子

512K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 x 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: 90/120 nS (ma

文件：174.28 Kbytes 页数：15 Pages

WINBOND

华邦电子

512K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 x 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: 90/120 nS (ma

文件：174.28 Kbytes 页数：15 Pages

WINBOND

华邦电子