N-CHANNEL 500V - 0.31W - 14A TO-247 PowerMesh II MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(

文件：266.34 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.31W - 14A TO-247 PowerMesh II MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(

文件：266.34 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.38Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.89 Kbytes 页数：2 Pages

ISC

无锡固电

TSOP48

WINBOND

华邦电子

上传：深圳市旺财半导体有限公司

TSOP48

WINBOND

华邦电子

上传：深圳市旺财半导体有限公司