丝印：W11；Package：SOT-23；DUAL ZENER DIODE 3.6 VOLTS THRU 33 VOLTS 350mW, 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZDA2V4 series dual silicon Zener diode is a high quality voltage regulator, connected in a common anode configuration, for use in industrial, commercial, entertainment and computer applications. MARKING CODE: SEE MARKING CODES ON ELECTRICAL CHARACTERISTI

文件：103.12 Kbytes 页数：2 Pages

Central

丝印：W11；Package：SOT-23；SURFACE MOUNT DUAL, SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 350mW

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZDA2V4 series dual silicon Zener diode is a high quality voltage regulator, connected in a common anode configuration, for use in industrial, commercial, entertainment and computer applications. MARKING CODE: SEE MARKING CODES ON ELECTRICAL CHARACTERISTI

文件：121.35 Kbytes 页数：2 Pages

Central

丝印：W11；Package：SOD-123；Silicon Planar Zener Diodes

文件：478.04 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：W11；Package：SOT-23；SURFACE MOUNT DUAL, COMMON ANODE SILICON ZENER DIODES 2.4 VOLTS

文件：401.76 Kbytes 页数：2 Pages

Central

丝印：W11NK100Z；Package：TO-247；N-channel 1000V - 1.1廓 - 8.3A - TO-247 Zener - Protected SuperMESH??PowerMOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：312.47 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：W11NM80；Package：TO-247；N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates th

文件：908.99 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

文件：87.37 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-channel 1000V - 1.1廓 - 8.3A - TO-247 Zener - Protected SuperMESH??PowerMOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：312.47 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Heavy cast aluminum top cover with embedded heat sink.

文件：491.77 Kbytes 页数：2 Pages

LUMINIS

Wirewound Power Resistor

文件：422.4 Kbytes 页数：3 Pages

Bourns

伯恩斯