Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.52 V at IF = 10 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

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VishayVishay Siliconix

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Low forward voltage drop, low power losses

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VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

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VishayVishay Siliconix

威世科技

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：128.889 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技