Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：126.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

文件：126.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

文件：126.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：126.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：126.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5.0 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Package：TO-220-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：30A,200V,TRENCH SCHOTTKY RECT.

Vishay General Semiconductor - Diodes Division

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：30A,200V,TRENCH SCHOTTKY RECT.

Vishay General Semiconductor - Diodes Division