VVZB135-16IOXT

Thyristor Module(3~ Rectifier Bridge, half-controlled (high-side) Brake Unit NTC)

3~RectifierBridge,half-controlled(high-side)+BrakeUnit+NTC Features/Advantages: ●PackagewithDCBceramic ●Improvedtemperatureandpowercycling ●Planarpassivatedchips ●Verylowforwardvoltagedrop ●Verylowleakagecurrent ●NTC Applications: ●3~Rectifierwithbrake

VVZB135-16IOXT

包装：散装 封装/外壳：E2 类别：分立半导体产品 晶闸管 - SCR - 模块 描述：DIODE BRIDGE 1600V 150A

BD135-16

NPNSILICONTRANSISTORS

NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance

BD135-16

Complementarylowvoltagetransistor

BD135-16

NPNpowertransistors

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesinhi-fiamplifiersandtelevisioncircuits.

BD135-16

NPNSILICONTRANSISTORS

BD135-16

PowerTransistorsNPNSilicon45,60,80Volts

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC=

BD135-16

Complementarylowvoltagetransistor

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

BD135-16

NPNPlasticEncapsulatedTransistor

FEATURES •Highcurrent •ComplementtoBD136,BD138andBD140

BD135-16

Complementarylowvoltagetransistor

Features ■Productsarepre-selectedinDCcurrentgain Application ■Generalpurpose Description Theseepitaxialplanartransistorsaremountedin theSOT-32plasticpackage.Theyaredesigned foraudioamplifiersanddriversutilizing complementaryorquasi-complementarycircuits.

JCT135-16

SCRChip

JME135-16

Chip-doublemesaSCRsofreverseblockinghigh-voltage

NKT135-16A

ThyristorDiodeandThyristor//Thyristor,135A(NewINT-A-PAKPowerModules)