.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices

文件：22.92 Kbytes 页数：1 Pages

PerkinElmer

30.0-36.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s two stage 30.0-36.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +33.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output

文件：251.7 Kbytes 页数：6 Pages

MIMIX

30.0-36.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s two stage 30.0-36.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +33.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated outp

文件：595.5 Kbytes 页数：6 Pages

MIMIX

30.0-36.0 GHz GaAs MMIC

文件：1.09885 Mbytes 页数：8 Pages

MIMIX