VTS3082H

包装：盒 封装/外壳：芯片，带 30 线规 PVC 导线 类别：传感器，变送器 光学传感器 - 光电二极管 描述：10X10MM SI PHOTODIODE SOLDERABLE

3082

1/2RectangularTrimpot짰TrimmingPotentiometer

ADM3082

High-Speed(10Mbps),Fail-Safe,RS-485/RS-422TransceiverswithSlew-Rate-Limitingand5kVESDProtection

ADM3082AN

High-Speed(10Mbps),Fail-Safe,RS-485/RS-422TransceiverswithSlew-Rate-Limitingand5kVESDProtection

ADM3082AR

High-Speed(10Mbps),Fail-Safe,RS-485/RS-422TransceiverswithSlew-Rate-Limitingand5kVESDProtection

ADM3082JN

High-Speed(10Mbps),Fail-Safe,RS-485/RS-422TransceiverswithSlew-Rate-Limitingand5kVESDProtection

ADM3082JR

High-Speed(10Mbps),Fail-Safe,RS-485/RS-422TransceiverswithSlew-Rate-Limitingand5kVESDProtection

ADNB-3082

High-performanceOpticalMouseSensor

Description TheADNS-3080isahighperformanceadditiontoAgilent’spopularADNSfamilyofopticalmousesensors. TheADNS-3080isbasedonanew,fasterarchitecturewithimprovednavigation.Thesensoriscapableofsensinghighspeedmousemotion-upto40inchespersecondandacceleratio

AZRS3082

Fail-Safe,Slew-Rate-LimitedRS-485Transceiverwith짹30kVESDTransientVoltageSuppressor

Features MeettheRequirementsoftheEIA/TIA-485 Standardswith5VPowerSupply IntegratedTransientVoltageSuppressor(TVS) TVSProtectionforBusTerminals: ±30kV,IEC61000-4-2,Contact/AirDischarge ±88A,IEC61000-4-4,EFT(5/50ns) ±30A,IEC61000-4-5,Surge(8/20μs) HBM±1

AZRS3082.RDG

Fail-Safe,Slew-Rate-LimitedRS-485Transceiverwith짹30kVESDTransientVoltageSuppressor

Features MeettheRequirementsoftheEIA/TIA-485 Standardswith5VPowerSupply IntegratedTransientVoltageSuppressor(TVS) TVSProtectionforBusTerminals: ±30kV,IEC61000-4-2,Contact/AirDischarge ±88A,IEC61000-4-4,EFT(5/50ns) ±30A,IEC61000-4-5,Surge(8/20μs) HBM±1

BX3082

RFAMPLIFIERMODEL

CA3082

GeneralPurposeHighCurrentNPNTransistorArrays

CA3082

GeneralPurposeHighCurrentNPNTransistorArrays

CA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommonemitterconfigurationandtheCA3082isconnectedinacommoncollectorconfiguration. Features •CA3081-CommonEmitterArray •CA3082-Com

CA3082

HIGHCURRENTNPNTRANSISTORforgeneralpurposeapplicationsBJTArray

HIGHCURRENTNPNTRANSISTOR forgeneralpurposeapplications TheCA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommoncollectorconfguration.TheCA3081andCA3082arecapableofdirectlydriving

CA3082F

HIGHCURRENTNPNTRANSISTORforgeneralpurposeapplicationsBJTArray

HIGHCURRENTNPNTRANSISTOR forgeneralpurposeapplications TheCA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommoncollectorconfguration.TheCA3081andCA3082arecapableofdirectlydriving

CA3082M

GeneralPurposeHighCurrentNPNTransistorArrays

CA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommonemitterconfigurationandtheCA3082isconnectedinacommoncollectorconfiguration. Features •CA3081-CommonEmitterArray •CA3082-Com

CA3082M

GeneralPurposeHighCurrentNPNTransistorArrays

CA3082M

HIGHCURRENTNPNTRANSISTORforgeneralpurposeapplicationsBJTArray

HIGHCURRENTNPNTRANSISTOR forgeneralpurposeapplications TheCA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommoncollectorconfguration.TheCA3081andCA3082arecapableofdirectlydriving

CDT3082

12餘듣Þ若싧츣?귛솳?㎩댍IC

CEM3082

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,12A,RDS(ON)=10.5mΩ@VGS=10V. RDS(ON)=15.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.