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VT3080C

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

文件:131.1 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VT3080C

Dual Trench MOS Barrier Schottky Rectifier

文件:148.93 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VT3080C-E3

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件:207.72 Kbytes 页数:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

VT3080C-E3_V01

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件:207.72 Kbytes 页数:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

VT3080CHM3-4W

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

文件:131.1 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VT3080C-M3-4W

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

文件:131.1 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VT3080C_12

Dual Trench MOS Barrier Schottky Rectifier

文件:148.93 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VT3080C_15

Dual Trench MOS Barrier Schottky Rectifier

文件:126.21 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VT3080C_15

Dual Trench MOS Barrier Schottky Rectifier

文件:166.6 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VT3080C-E3

Dual Trench MOS Barrier Schottky Rectifier

文件:166.6 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    VT3080C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY/威世
23+
TO220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY
25+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原厂渠道,现货配单
询价
Vishay
2023+环保现货
TO-220AB
5050
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
Vishay Semiconductor Diodes Di
23+
TO220AB
8000
只做原装现货
询价
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
询价
VISHAY
26+
SOT-89
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
询价
VIA
24+
BGA
765
询价
VIA
24+
BGA-552
9600
原装现货,优势供应,支持实单!
询价
VIA
03+
BGA-552/240PCS
360
原装现货海量库存欢迎咨询
询价
更多VT3080C供应商 更新时间2026-4-17 16:10:00