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VT3080C

Dual Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea

VishayVishay Siliconix

威世科技威世科技半导体

VT3080C

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VT3080C-E3

Dual Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半导体

VT3080C-E3_V01

Dual Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半导体

VT3080CHM3-4W

Dual Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea

VishayVishay Siliconix

威世科技威世科技半导体

VT3080C-M3-4W

Dual Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea

VishayVishay Siliconix

威世科技威世科技半导体

VT3080C_12

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VT3080C_15

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VT3080C_15

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VT3080C-E3

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    VT3080C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY/威世
23+
TO220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY
1809+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原厂渠道,现货配单
询价
VIS
23+
TO-220AB
6000
原装正品,支持实单
询价
Vishay
2023+环保现货
TO-220AB
5050
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
VIS
22+
TO-220AB
25000
只做原装进口现货,专注配单
询价
Vishay Semiconductor Diodes Di
23+
TO220AB
8000
只做原装现货
询价
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
询价
Vishay General Semiconductor -
25+
TO-220-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY(威世)
24+
TO220
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
更多VT3080C供应商 更新时间2025-7-18 18:02:00