Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application

文件：135.08 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application

文件：130.729 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：83.36 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application

文件：135.08 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技