Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

文件：109.97 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：137.72 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

QFP

VOLTERRA

上传：深圳庞田科技有限公司

QFP128

VIA

威盛电子

上传：深圳市力拓辉电子有限公司

BGA

VOLTERR

上传：深圳市融意电子有限公司