Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

文件：97.3 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

文件：109.97 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

文件：91.93 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

分立 Low profile package\nIdeal for automated placement\nTrench MOS Schottky technology;

Vishay

威世

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

文件：97.3 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount Trench MOS Barrier Schottky Rectifier

文件：81.62 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：DO-214AB，SMC；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 45V 3.8A DO214AB

Vishay General Semiconductor - Diodes Division

Package：DO-214AB，SMC；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 45V 4.9A DO214AB

Vishay General Semiconductor - Diodes Division