Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

文件：103.38 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Ideal for automated placement

文件：94.27 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

分立 Low profile package\nIdeal for automated placement\nTrench MOS Schottky technology;

Vishay

威世

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

文件：103.38 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount Trench MOS Barrier Schottky Rectifier

文件：84.17 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 100V 1.9A DO214AA

Vishay General Semiconductor - Diodes Division

Package：DO-214AA，SMB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 100V 1.9A DO214AA

Vishay General Semiconductor - Diodes Division