| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VSSAF3M6 | Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive 文件：110.99 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世 | Vishay | |
VSSAF3M6 | Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：110.35 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世 | Vishay | |
VSSAF3M6 | Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier 分立 Very low profile - typical height of 0.95 mm\nIdeal for automated placement\nTrench MOS Schottky technology; | Vishay 威世 | Vishay | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive 文件：110.99 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering 文件：110.35 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering 文件：110.35 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering 文件：110.35 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering 文件：110.35 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：110.35 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：110.35 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
25+ |
DO-221 |
6675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY |
23+ |
SMA-2 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Vishay General Semiconductor - |
25+ |
DO-221AC(SlimSMA) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
Vishay |
24+ |
DO-221A |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
VISHAY |
25+23+ |
DO-221AC |
23602 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY |
19+ |
DO-221AC |
200000 |
询价 | |||
VISHAY/威世 |
23+ |
DO-221AC |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY |
24+ |
DO-221AC |
3500 |
原装现货假一赔十 |
询价 |
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