首页 >VSO007N04MS-G>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-ChannelEnhancementModePowerMOSFET Description TheGT007N04TLusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
MOSFET??Power,SingleN-Channel40V,8.6m,49A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET??Power,SingleN-Channel40V,7.3m,54A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET??Power,SingleN-Channel40V,7.3m,54A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET??Power,SingleN-Channel40V,8.6m,49A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER |
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