首页 >VSMF3710-GS08功率二极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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HighSpeedInfraredEmittingDiode,870nm,GaAlAsDoubleHetero Description TSMF3710isahighspeedinfraredemittingdiodeinGaAlAsdoublehetero(DH)technologyinaminiaturePLCC-2SMDpackage. DHtechnologycombineshighspeedwithhighradiantpoweratwavelengthof870nm. Features •Highradiantpower •Highspeedtr=30ns •Highmodulationb | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighPowerInfraredEmittingDiode,950nm,GaAlAs/GaAs Description TSML3710isaninfraredemittingdiodeinGaAlAsonGaAstechnologyinminiaturePLCC-2SMDpackage. Features •SMTIREDwithextrahighradiantpower •Lowforwardvoltage •Compatiblewithautomaticplacementequipment •EIAandICEstandardpackage •Suitable | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode,890nm,GaAlAsDoubleHetero | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode,RoHSCompliant,890nm,GaAlAsDoubleHetero | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode,890nmRoHSCompliant,ReleasedforLead(Pb)-freeSolderProcess | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighPowerInfraredEmittingDiode,940nm,GaAlAs,MQW DESCRIPTION VSML3710isaninfrared,940nmemittingdiodeinGaAlAs, MQW(multiquantumwell)technologywithhighradiant power,moldedinaPLCC-2packageforsurfacemounting (SMD). FEATURES •Packagetype:surfacemount •Packageform:PLCC-2 •Dimensions(LxWxHinmm):3.5x2. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighPowerInfraredEmittingDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighPowerInfraredEmittingDiode,940nm,GaAlAs/GaAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighPowerInfraredEmittingDiode,RoHSCompliant,940nm,GaAlAs/GaAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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