Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 430 A

FEATURES • High current capability • High surge capability • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic substrate • Industrial standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC TYPICAL APPLICATIONS • Motor starters

文件：240.06 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Thyristor/Diode and Thyristor/Thyristor, 430 A (SUPER MAGN-A-PAK Power Modules)

FEATURES • High current capability • High surge capability • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic substrate • Industrial standard package • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.com/

文件：189.26 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Thyristor/Diode and Thyristor/Thyristor, 430 A (SUPER MAGN-A-PAK Power Modules)

FEATURES • High current capability • High surge capability • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic substrate • Industrial standard package • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.com/

文件：189.26 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Thyristor/Diode and Thyristor/Thyristor, 430 A (SUPER MAGN-A-PAKTM Power Modules)

FEATURES • High current capability • High surge capability • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic substrate • Industrial standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC TYPICAL APPLICATIONS • Motor starters • D

文件：237.12 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 430 A

文件：240.06 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel MOSFET

General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching

文件：829.53 Kbytes 页数：8 Pages

WISDOM