IIRLR7807Z

N-ChannelMOSFETTransistor

•DESCRITION •HighFrequencySynchronousBuckConvertersForComputerProcessorPower •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤13.8mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IRF7807

Chip-SetforDC-DCConverters

Description ThesenewdevicesemployadvancedHEXFETPowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakethemidealforhighefficiencyDC-DCConvertersthatpowerthelatestgenerationofmobilemicroproce

IRF7807

ControlFETforNotebookProcessorPower

Features Applications ControlFETforNotebookProcessorPower SynchronousRectifierMOSFETfor GraphicsCardsandPOLConvertersin NetworkingandTelecommunicationSystems VDS(V)=30V RDS(ON)13.8m(VGS=10V) RDS(ON)18.2m(VGS=4.5V)

IRF7807

MOSFET

Features VDS(V)=30V RDS(ON)

IRF7807A

Chip-SetforDC-DCConverters

Description ThesenewdevicesemployadvancedHEXFETPowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakethemidealforhighefficiencyDC-DCConvertersthatpowerthelatestgenerationofmobilemicroproce

IRF7807APBF

HEXFET짰Chip-SetforDC-DCConverters

IRF7807ATRPBF

N-Channel20V(D-S)MOSFET

IRF7807PBF

NChannelApplicationSpecificMOSFETs

IRF7807PBF

HEXFET짰Chip-SetforDC-DCConverters

IRF7807TR

ControlFETforNotebookProcessorPower

Features Applications ControlFETforNotebookProcessorPower SynchronousRectifierMOSFETfor GraphicsCardsandPOLConvertersin NetworkingandTelecommunicationSystems VDS(V)=30V RDS(ON)13.8m(VGS=10V) RDS(ON)18.2m(VGS=4.5V)