Power Rectifiers Diodes (T-modules), 40 A to 110 A

FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Designed and qualified for industrial level • Material categorization

文件：272.59 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power Rectifiers Diodes (T-Modules), 40 A to 110 A

Electrically isolated base plate\nTypes up to 1200 VRRM\n3500 VRMS isolating voltage;

Vishay

威世

Package：D-55 T 模块；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 85A D-55

Vishay General Semiconductor - Diodes Division

Power Rectifiers Diodes (T-modules), 40 A to 110 A

FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Designed and qualified for industrial level • Material categorization

文件：272.59 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power Rectifiers Diodes (T-Modules), 40 A to 110 A

Electrically isolated base plate\nTypes up to 1200 VRRM\n3500 VRMS isolating voltage;

Vishay

威世

Package：D-55 T 模块；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1KV 85A D-55

Vishay General Semiconductor - Diodes Division