Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Optimized for h

文件：158.73 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

文件：272.53 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Optimized for h

文件：158.73 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor Trench PT IGBT, 650 V, 120 A Proprietary Vishay IGBT Silicon

·Standard speed Trench PT IGBT\n·Fully isolated package\n·Very low internal inductance (≤ 5 nH typical);

Vishay

威世

Package：SOT-227-4，miniBLOC；包装：托盘托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MOD 600V 380A 893W SOT227

Vishay General Semiconductor - Diodes Division