VS-6ESH01-M3分立半导体产品的二极管-整流器-单规格书PDF中文资料

厂商型号	VS-6ESH01-M3
参数属性	VS-6ESH01-M3 封装/外壳为TO-277，3-PowerDFN；包装为卷带（TR）；类别为分立半导体产品的二极管-整流器-单；产品描述：DIODE GEN PURP 100V 6A TO277A
功能描述	Hyperfast Rectifier, 6 A FRED Pt짰
封装外壳	TO-277，3-PowerDFN
文件大小	143.53 Kbytes
页面数量	7 页
生产厂商	Vishay Siliconix
企业简称	VISHAY【威世科技】
中文名称	威世科技半导体官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-29 23:00:00
人工找货	VS-6ESH01-M3价格和库存，欢迎联系客服免费人工找货

FEATURES

• Hyperfast recovery time, reduced Qrr, and soft

recovery

• 175 °C maximum operating junction temperature

• Specified for output and snubber operation

• Low forward voltage drop

• Low leakage current

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Meets JESD 201 class 2 whisker test

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION / APPLICATIONS

State of the art hyperfast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and hyperfast recovery time.

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness, and

reliability characteristics.

These devices are intended for use in snubber, boost,

lighting, as high frequency rectifiers and freewheeling

diodes.

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element.

MECHANICAL DATA

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS compliant

Terminals: matte tin plated leads, solderable per

J-STD-002