VS-3C06ET07T-M3中文资料威世数据手册PDF规格书

FEATURES

• Majority carrier diode using Schottky technology

on SiC wide band gap material

• Improved VF and efficiency by thin wafer

technology

• Positive VF temperature coefficient for easy

paralleling

• Virtually no recovery tail and no switching losses

• Temperature invariant switching behavior

• 175 °C maximum operating junction temperature

• MPS structure for high ruggedness to forward current

surge events

• Meets JESD 201 class 1A whisker test

• Solder bath temperature 275 °C maximum, 10 s per

JESD 22-B106

• Material categorization: for definitions of compliance

DESCRIPTION / APPLICATIONS

Wide band gap SiC based 650 V Schottky diode, designed

for high performance and ruggedness.

Optimum choice for high speed hard switching and efficient

operation over a wide temperature range, it is also

recommended for all applications suffering from Silicon

ultrafast recovery behavior.

Typical applications include AC/DC PFC and DC/DC ultra

high frequency output rectification in FBPS and LLC converters.