VRF3933分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

VRF3933属于分立半导体产品的晶体管-FETMOSFET-射频。由美高森美半导体公司制造生产的VRF3933晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

RF POWER VERTICAL MOSFET

The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.

FEATURES

• Improved Ruggedness V(BR)DSS = 250V

• 300W with 22dB Typ. Gain @ 30MHz, 100V

• Excellent Stability & Low IMD

• Common Source Configuration

• Available in Matched Pairs

• 3:1 Load VSWR Capability at Specified Operating Conditions

• Nitride Passivated

• Refractory Gold Metallization

• Improved Replacement for SD3933

• Thermally Enhanced Package

• RoHS Compliant