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VS1000-MOD

VS1000AudioModule

Features PlaysaudiofrommicroSDcardorSPI Flash UsespowerfulOggVorbisaudioformat Firmwareandcontentcanbecustomized ControlledviaUARTorIOpins Verysimpletouse,UARTisenoughto sendcommands High-performanceCDqualityanalogout Supportslowbitratesa

VLSI

VLSI Solution Oy

VSP1000

Low-Power,High-SpeedBufferforCCDSensor

TI1Texas Instruments

德州仪器

VSP1000DSFR

Low-Power,High-SpeedBufferforCCDSensor

TI1Texas Instruments

德州仪器

VSP1000DSFT

Low-Power,High-SpeedBufferforCCDSensor

TI1Texas Instruments

德州仪器

VS-ST1000C..K

PhaseControlThyristors(HockeyPUKVersion),1473A

FEATURES •Centeramplifyinggate •Metalcasewithceramicinsulator •InternationalstandardcaseK-PUK(A-24) •HighprofilehockeyPUK •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS •DCmotorcontrols •ControlledD

VishayVishay Siliconix

威世科技威世科技半导体

VS-ST1000CK

PhaseControlThyristors(HockeyPUKVersion),1473A

VishayVishay Siliconix

威世科技威世科技半导体

VS-ST1000CK

PhaseControlThyristors(HockeyPUKVersion),1473A

FEATURES •Centeramplifyinggate •Metalcasewithceramicinsulator •InternationalstandardcaseK-PUK(A-24) •HighprofilehockeyPUK •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS •DCmotorcontrols •ControlledD

VishayVishay Siliconix

威世科技威世科技半导体

VT1000

HIGHVOLTAGE50mASILICONRECTIFIERS

HIGHVOLTAGE50mASILICONRECTIFIERS ●SMALLSIZEMOLDEDPACKAGE ●PRV10,000TO15,000VOLTS ●FASTRECOVERY(R_SERIES) ●AVALANCHECHARACTERISTICS ●LOWLEAKAGE

edi

Electronic devices inc.

VTF1000BX

Conformal,SingleIn-LineResistorNetworks(Standard)

VishayVishay Siliconix

威世科技威世科技半导体

VX-RPS-1000

SimplifiededgeswitchoperationleveragingthepowerofExtremeXOS®aggregationswitches

KeyFeatures •ScalablefamilyofedgeswitchescentrallypoweredbyExtremeXOSsoftware •EdgecomponentofExtreme'sExtendedEdgeSwitchingsolution •SeamlesslyrunsadvancedservicesresidingonExtremeXOSaggregationswitch •Centralized,singlepointofcontrolreducescomplexityandop

EXTREMENETWORKS

Extreme Networks.

详细参数

  • 型号:

    VQ1000P

  • 功能描述:

    MOSFET QD 60V 0.225A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
SIL
专业军工
CDIP
860
只做原装正品现货授权货源
询价
SVISHAY
24+
DIP14
48
只做原厂渠道 可追溯货源
询价
SIL
24+
CDIP
66800
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
询价
SIL
24+
CDIP20
108
询价
SI
1430+
DIP
5800
全新原装,公司大量现货供应,绝对正品
询价
VISHAY
23+
DIP14
5000
原装正品,假一罚十
询价
SI
23+
DIP
1050
特价库存
询价
SIL
24+
CDIP
200
进口原装正品优势供应
询价
SILICONI
05+
100
原装正品
询价
SVISHAY
1948+
DIP14
6852
只做原装正品现货!或订货假一赔十!
询价
更多VQ1000P供应商 更新时间2025-5-7 14:58:00