VP2206中文资料MOSFET, P-Channel Enhancement-Mode, -60V, 0.9 Ohm数据手册Microchip规格书
VP2206规格书详情
描述 Description
VP2206 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
特性 Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode
技术参数
- 制造商编号
:VP2206
- 生产厂家
:Microchip
- BVdss min (V)
:-60
- Rds (on) max (Ohms)
:0.9
- Vgs(th) max (V)
:-3.5
- CISSmax (pF)
:450
- Packages
:3\\TO-393\\TO-92
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SUPERTEX |
24+ |
TO-39 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
SILICONI/矽睿科技 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
SI |
24+ |
CAN |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
SUPERTEX |
23+ |
(mils)1717 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
SUPERTEX |
23+ |
TO-92 |
8000 |
只做原装现货 |
询价 | ||
MICROCHIP(美国微芯) |
2447 |
TO-92-3 |
31500 |
2000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
SUPERTEX |
23+ |
TO-92 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SILICONI |
专业铁帽 |
CAN3 |
1890 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
NK/南科功率 |
2025+ |
SOT-23 |
986966 |
国产 |
询价 |