P-Channel Enhancement-Mode D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] FEATURES ■ Gate Stand-off Voltage, ±40V min. ■ Low Output and Transfer Capacitances ■ N-Channel Complements Available APPLICATIONS ■ Motor Controls ■ Logic Interface ■ Pulse Amplifiers

文件：104.99 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

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P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low On-Resistance: 2.5 Ω ● Moderate Threshold: –3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Switching ● Easily Driven Without Buf

文件：91.24 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low Cm-Resistance: 2.5 Q ● Moderate Threshold: -3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-VoltageOperation ● High-Speed Switching ● Easily Driven Without Buff

文件：93.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low Cm-Resistance: 2.5 Q ● Moderate Threshold: -3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-VoltageOperation ● High-Speed Switching ● Easily Driven Without Buff

文件：93.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low On-Resistance: 2.5 Ω ● Moderate Threshold: –3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Switching ● Easily Driven Without Buf

文件：91.24 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low On-Resistance: 2.5 Ω ● Moderate Threshold: –3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Switching ● Easily Driven Without Buf

文件：91.24 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low Cm-Resistance: 2.5 Q ● Moderate Threshold: -3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-VoltageOperation ● High-Speed Switching ● Easily Driven Without Buff

文件：93.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：17.92 Kbytes 页数：2 Pages

SEME-LAB

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：151.83 Kbytes 页数：3 Pages

SEME-LAB

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：151.83 Kbytes 页数：3 Pages

SEME-LAB