VOM618A-8T中文资料威世科技数据手册PDF规格书

DESCRIPTION

The 110 °C rated VOM618A has a GaAs infrared emitting

diode emitter, which is optically coupled to a silicon planar

phototransistor detector, and is incorporated in a 4 pin

100 mil lead pitch miniflat package. It features a high current

transfer ratio with low input current, low coupling

capacitance, and high isolation voltage.

These coupling devices are designed for signal transmission

between two electrically separated circuits.

FEATURES

• Operating temperature from - 55 °C to + 110 °C

• SOP-4 mini-flat package

• CTR range 40 to 600 , IF = 1 mA

• Isolation test voltage, 3750 VRMS

• Low saturation voltage

• Fast switching times

• Low coupling capacitance

• End-stackable, 0.100 (2.54 mm) spacing

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• PLCs

• Telecommunication

• Lighting control system

• Solar inverters

• AC drives

AGENCY APPROVALS

(All parts are certified under base model VOM618A)

• UL1577, file no. E52744

• cUL tested to CSA 22.2 bulletin 5A

• DIN EN 60747-5-5 (VDE 0884-5), available with option 1

• FIMKO EN 60065 and EN 60950-1

• CQC: GB8898-2011, GB4943.1-2011