VO610A-4X008T中文资料威世科技数据手册PDF规格书

DESCRIPTION

The VO610A consists of a phototransistor optically coupled

to a gallium arsenide infrared-emitting diode in a 4 pin

plastic dual inline package.

AGENCY APPROVALS

(All parts are certified under base model VO610A)

• BSI: EN 60065:2002, EN 60950:2000

• DIN EN 60747-5-5, available with option 1

• FIMKO EN 60065, EN 60335-1, EN 60950-1

• UL file no. E52744

• cUL tested to CSA 22.2 bulletin 5A

• CQC GB4943.1-2011, GB8898-2011

FEATURES

• Temperature range - 55 °C to + 110 °C

• Rated impulse voltage (transient overvoltage)

VIOTM = 6 kVpeak

• Isolation test voltage (partial discharge test

voltage) Vpd = 1.6 kV

• Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

• Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak

• Thickness through insulation  0.4 mm

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Circuits for safe protective separation against electrical

shock according to safety class II (reinforced isolation):

• for appl. class I - IV at mains voltage  300 V

• for appl. class I - IV at mains voltage  600 V according to

table 1 of IEC 60664-1, suitable for:

- Switch-mode power supplies

- Line receiver

- Computer peripheral interface

- Microprocessor system interface