首页 >VNP5N07-EIC>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics®VIPower®M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics®VIPower®M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics®VIPower®M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET Description TheVND5N07-EisamonolithicdevicedesignedusingSTMicroelectronics®VIPower®M0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvir | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND5N07isamonolithicdevicedesignedinSTMicroelectronicsVIPowerM0technology,intendedforreplacementofstandardPowerMOSFETsfromDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvironments. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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